System Specifications
• 30 kV system equipped with a Zeiss Gemini electron column
• Multiple aperture sizes for beam current tunning (5 pA to 20 nA)
• Laser interferometer stage with 2 nm precision resolution
• Stage travel range: 150 x150 x 20 mm
• Beam size: 2.2 nm in X and Y at 20 kV; less than 10 nm for 1 kV
• Maximum write field: 100 x 100 μm (beam deflection, no stage movement)
• Available detectors: Everhart-Thornley Detector, Annular in-lens detector
• Universal sample holder (UHS): sample holder for chips and fragments
• The system is enclosed in an environmentally controlled enclosure.
System performance
• Minimum features are less than 20 nm guaranteed; can easily get 12 nm.
• Demonstrated 8.2 nm feature size when using Hydrogen Silsesquioxane (HSQ) resist
• Stitching accuracy for a 100 μm write field: 11.9 nm
• Overlay accuracy for a 100 μm write field: 26.2 nm
The patterning is controlled using the Raith Nanosuite software package. The software provides full control of the EBL system as well as integrating design files (GDSII, DXF or Raith native) for lithography. A second license is installed on a second computer in the cleanroom to support pattern design.
Available resists
• Positive resist: Poly(methyl methacrylate), PMMA 950 A4 (4% solution in anisole)
o thickness 100 – 200 nm.
o Developer: MIBK:IPA 1:3 ratio
o 200- 500 μC/cm2
Training
To receive training on the Raith EBL, please contact Raluca Gearba at gearba@austin.utexas.edu to first discuss your project. A training class is available on UTLearn: TMI: Raith150Two_EBL. Before registering for the training class the users will need to complete the Cleanroom Safety Training which is also available on UTLearn. To register for the class, the users will need to do the following:
• Login in UTLearn using your UTEID
• Do a global search as “TMI”
• Select the desired class
• Press the “Select a Session” tab
• Select “View Details”
• Press “Request